april 2013 ?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FGA50N100BNTD rev. c2 FGA50N100BNTD 1000 v npt trench igbt FGA50N100BNTD 1000 v npt trench igbt general description using fairchild ? 's proprietary trench design and advanced npt technology, the 1000v np t igbt offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. this device offers the optimum performance for hard switching application such as ups, welder applications. features ? high speed switching ? low saturation voltage : v ce(sat) = 2.5 v @ i c = 60 a ? high input impedance ? built-in fast recovery diode absolute maximum ratings t c = 25 ? c unless otherwise noted symbol description FGA50N100BNTD unit v ces collector-emitter voltage 1000 v v ges gate-emitter voltage ? 25 v i c collector current @ t c = 25 ? c 50 a collector current @ t c = 100 ? c 35 a i cm (1) pulsed collector current 100 a i f diode continuous forward current @ t c = 100 ? c 15 a p d m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 ? c 156 w maximum power dissipation @ t c = 100 ? c 63 w t j operating junction temperature -55 to +150 ? c t stg storage temperature range -55 to +150 ? c t l maximum lead temp. for soldering ? purposes, 1/8? from case for 5 seconds 300 ? c notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction-to-case -- 0.8 ? c/w r ? jc (diode) thermal resistance, junction-to-case -- 2.4 ? c/w r ? ja thermal resistance, junction-to-ambient -- 25 ? c/w application ups, welder, induction heating, microwave oven g c e g c e g c e to-3p
?2006 fairchild semiconductor corporation 2 www.fairchildsemi.com FGA50N100BNTD rev. c2 FGA50N100BNTD 1000 v npt trench igbt package marking and ordering information device marking device package packaging type qty per tube max qty per box FGA50N100BNTD FGA50N100BNTDtu to-3p rail / tube 30ea - electrical characteristics of igbt t c = 25 ? c unless otherwise noted symbol parameter test conditions min. typ. max. unit ? off characteristics bv ces collector emitter breakdown voltage v ge = 0v, i c = 1ma 1000 -- -- v i ces collector cut-off current v ce = 1000v, v ge = 0v -- -- 1.0 ma i ges g-e leakage current v ge = 25, v ce = 0v -- -- 500 na ? on characteristics v ge(th) g-e threshold voltage i c = 60ma, v ce = v ge 4.0 5.0 7.0 v v ce(sat) collector to emitter ? saturation voltage i c = 10a , v ge = 15v -- 1.5 1.8 v i c = 60a , v ge = 15v -- 2.5 2.9 v ? dynamic characteristics c ies input capacitance v ce =10v , v ge = 0v, f = 1mhz -- 6000 -- pf c oes output capacitance -- 260 -- pf c res reverse transfer capacitance -- 200 -- pf ? switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 60a, r g = 51 ? , v ge =15v, resistive load, t c = 25? c -- 140 -- ns t r rise time -- 320 -- ns t d(off) turn-off delay time -- 630 -- ns t f fall time -- 130 250 ns q g total gate charge v ce = 600 v, i c = 60a, v ge = 15v , , t c = 25? c -- 275 350 nc q ge gate-emitter charge -- 45 -- nc q gc gate-collector charge -- 95 -- nc electrical characteristics of diode t c = 25 ? c unless otherwise noted symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 15a -- 1.2 1.7 v i f = 60a -- 1.8 2.1 v t rr diode reverse recovery time i f = 60a di/dt = 20 a/us 1.2 1.5 us i r instantaneous reverse current v rrm = 1000v -- 0.05 2 ua
?2006 fairchild semiconductor corporation 3 www.fairchildsemi.com FGA50N100BNTD rev. c2 FGA50N100BNTD 1000 v npt trench igbt 012345 0 20 40 60 80 100 20v 15v 10v 9v 8v 7v v ge = 6v common emitter t c = 25 o c collector current, i c [a] collector-emitter voltage, v ce [v] 01234 0 10 20 30 40 50 60 70 80 90 common emitter v ge = 15v tc = 25 o c tc = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] -50 0 50 100 150 1 2 3 i c =10a 30a 60a 80a common emitter v ge =15v
?2006 fairchild semiconductor corporation 4 www.fairchildsemi.com FGA50N100BNTD rev. c2 FGA50N100BNTD 1000 v npt trench igbt 0 5 10 15 20 25 30 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c cres coes cies capacitance [pf] collector-emitter voltage, v ce [v] 0 50 100 150 200 10 100 1000 10000 v cc =600v, i c =60a v ge = +/-15v t c =25 o c tdoff tdon tr tf
?2006 fairchild semiconductor corporation 5 www.fairchildsemi.com FGA50N100BNTD rev. c2 FGA50N100BNTD 1000 v npt trench igbt fig 17. junction capacitance 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 o c t c = 100 o c forward voltage, v fm [v] forward current, i f [a] 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i rr t rr i f = 60 a t c = 25 o c di/dt [a/us] reverse recovery time, t rr [us] 0 20 40 60 80 100 120 reverse recovery current i rr [a] 10 20 30 40 50 60 0.4 0.6 0.8 1.0 1.2 i rr t rr forward current, i f [a] reverse recovery time, t rr [us] 4 6 8 10 12 di/dt=-20a/us t c =25 o c reverse recovery current i rr [a] 0 300 600 900 1e-3 0.01 0.1 1 10 100 1000 t c = 150 o c t c = 25 o c reverse current, i r [ua] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 250 t c = 25 o c capacitance, c j [pf] reverse voltage, v r [v] fig 14. reverse recovery characteristics vs. di/dt fig 13. forward characteristics fig 15. reverse recovery characteristics vs. forward current fig 16. reverse current vs. reverse voltage
?2006 fairchild semiconductor corporation 6 www.fairchildsemi.com FGA50N100BNTD rev. c2 FGA50N100BNTD 1000 v npt trench igbt mechanical dimensions dimensions in millimeters to-3pn
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?2006 fairchild semiconductor corporation 7 www.fairchildsemi.com FGA50N100BNTD rev. c2 FGA50N100BNTD 1000 v npt trench igbt
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